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Title: Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
Authors: Solanki, Ankur
Guerrero, Antonio
Zhang, Qiannan
Bisquert, Juan
Sum, Tze Chien
Keywords: Science::Physics
Issue Date: 2019
Source: Solanki, A., Guerrero, A., Zhang, Q., Bisquert, J., & Sum, T. C. (2020). Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories. Journal of Physical Chemistry Letters, 11(2), 463-470. doi:10.1021/acs.jpclett.9b03181
Project: NTU Start-up Grant M4080514 
JSPS-NTU Joint Research Project M4082176 
MOE AcRF Tier 1 Grant RG173/16 
MOE AcRF Tier 2 Grant MOE2015-T2-2-015 
MOE AcRF Tier 2 Grant MOE2016-T2-1-034 
MOE AcRF Tier 2 Grant MOE2017-T2-1-110 
Singapore National Research Foundation NRF Investigatorship Programme NRF-NRFI-2018-04 
Ministerio de Ciencia, Innovacioń y Universidades of Spain under Project MAT2016-76892-C3-1-R 
MICINN Ramoń y Cajal Fellowship (RYC201416809) 
University Jaume I (UJI-B2017-32) 
Journal: Journal of Physical Chemistry Letters 
Abstract: Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications.
ISSN: 1948-7185
DOI: 10.1021/acs.jpclett.9b03181
DOI (Related Dataset): 10.21979/N9/5DXP9O
Schools: School of Physical and Mathematical Sciences 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of Physical Chemistry Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
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