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dc.contributor.authorLiang, Yuanen_US
dc.contributor.authorBoon, Chirn Chyeen_US
dc.contributor.authorLi, Chenyangen_US
dc.contributor.authorTang, Xiao-Lanen_US
dc.contributor.authorNg, Herman Jallien_US
dc.contributor.authorKissinger, Dietmaren_US
dc.contributor.authorWang, Yongen_US
dc.contributor.authorZhang, Qingfengen_US
dc.contributor.authorYu, Haoen_US
dc.identifier.citationLiang, Y., Boon, C. C., Li, C., Tang, X.-L., Ng, H. J., Kissinger, D., ... Yu, H. (2019). Design and analysis of D-Band on-chip modulator and signal source based on split-ring resonator. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 27(7), 1513-1526. doi:10.1109/TVLSI.2019.2906680en_US
dc.description.abstractIn an effort towards high-speed and low-power I/O data link in future Exa-scale data server, this paper presents a signal source and a modulator in D-band. Split-ring resonator (SRR) structures are used in both to boost the signal power and extinction ratio (ER). The modulator manifests itself as a compact SRR whose magnetic resonance frequency can be modulated by high speed data. Such a magnetic metamaterial achieves a significant reduction of radiation loss with high ER by stacking two auxiliary SRR unit-cells with interleaved placement. The high-Q tank for oscillation is realized by a stacked SRR decorated with slow-wave transmission line (T-line) for electric field confinement. A 4-ways power combined fundamental 80-GHz coupled-oscillator-network is magnetically synchronized by the slow-wave T-line, which is frequency doubled to 160 GHz. Fabricated in 65-nm CMOS process, the measured results show that: 1) the modulator achieves 3 dB insertion loss at on-state with 43 dB isolation at off-state, leading to a 40-dB ER at 125 GHz within an area of only 40 μm × 67 μm. 2) The signal source achieves 6.3% frequency tuning range (FTR) with 3.7 mW peak output power at 160 GHz within 0.053 mm2 active area. It has a measured phase noise of –105 dBc/Hz at 10 MHz offset, 5.5% DC-to-RF power efficiency, 70.1 mW/mm2 power density, FOM of –171 dBc/Hz and FOMT of –172.7 dBc/Hz.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.relationMOE RG86/16en_US
dc.relation.ispartofIEEE Transactions on Very Large Scale Integration (VLSI) Systemsen_US
dc.rights© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleDesign and analysis of D-Band on-chip modulator and signal source based on split-ring resonatoren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchCentre for Integrated Circuits and Systemsen_US
dc.description.versionAccepted versionen_US
dc.subject.keywordsIntegrated Circuitsen_US
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