Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138278
Title: Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs
Authors: Begum, Raihana
Chin, Xin Yu
Li, Mingjie
Damodaran, Bahulayan
Sum, Tze Chien
Mhaisalkar, Subodh
Mathews, Nripan
Keywords: Science::Physics
Engineering::Materials
Issue Date: 2019
Source: Begum, R., Chin, X. Y., Li, M., Damodaran, B., Sum, T. C., Mhaisalkar, S., & Mathews, N. (2019). Stable Sn 2+ doped FAPbI 3 nanocrystals for near-infrared LEDs. Chemical Communications, 55(38), 5451-5454. doi:10.1039/c9cc01526d
Journal: Chemical Communications 
Abstract: Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs.
URI: https://hdl.handle.net/10356/138278
ISSN: 1359-7345
DOI: 10.1039/c9cc01526d
Rights: © 2019 The Royal Society of Chemistry. All rights reserved. This paper was published in Chemical Communications and is made available with permission of The Royal Society of Chemistry.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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