Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138291
Title: Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites
Authors: Shan, Yingying
Lyu, Zhensheng
Guan, Xinwei
Younis, Adnan
Yuan, Guoliang
Wang, Junling
Li, Sean
Wu, Tom
Keywords: Engineering::Materials
Issue Date: 2018
Source: Shan, Y., Lyu, Z., Guan, X., Younis, A., Yuan, G., Wang, J., . . . Wu, T. (2018). Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites. Physical Chemistry Chemical Physics, 20(37), 23837-23846. doi:10.1039/c8cp03945c
Journal: Physical Chemistry Chemical Physics
Abstract: Resistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types of low-cost solution-processed ReRAMs with sandwich structures: one is hybrid nanocomposites with charge-trapping nanoparticles (NPs) embedded in a polymer matrix, and the other is hybrid halide perovskites which have been intensively investigated recently for optoelectronic applications. We will review the recent developments in materials selection, device performance and operation mechanisms. Resistive switching in hybrid materials and composites is ubiquitous because of the abundant existence of charge-trapping defects and interfaces. The future challenges and potential breakthroughs will also be outlined.
URI: https://hdl.handle.net/10356/138291
ISSN: 1463-9076
DOI: 10.1039/c8cp03945c
Rights: © 2018 the Owner Societies. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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