Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138291
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dc.contributor.authorShan, Yingyingen_US
dc.contributor.authorLyu, Zhenshengen_US
dc.contributor.authorGuan, Xinweien_US
dc.contributor.authorYounis, Adnanen_US
dc.contributor.authorYuan, Guoliangen_US
dc.contributor.authorWang, Junlingen_US
dc.contributor.authorLi, Seanen_US
dc.contributor.authorWu, Tomen_US
dc.date.accessioned2020-04-30T04:33:10Z-
dc.date.available2020-04-30T04:33:10Z-
dc.date.issued2018-
dc.identifier.citationShan, Y., Lyu, Z., Guan, X., Younis, A., Yuan, G., Wang, J., . . . Wu, T. (2018). Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites. Physical Chemistry Chemical Physics, 20(37), 23837-23846. doi:10.1039/c8cp03945cen_US
dc.identifier.issn1463-9076en_US
dc.identifier.urihttps://hdl.handle.net/10356/138291-
dc.description.abstractResistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types of low-cost solution-processed ReRAMs with sandwich structures: one is hybrid nanocomposites with charge-trapping nanoparticles (NPs) embedded in a polymer matrix, and the other is hybrid halide perovskites which have been intensively investigated recently for optoelectronic applications. We will review the recent developments in materials selection, device performance and operation mechanisms. Resistive switching in hybrid materials and composites is ubiquitous because of the abundant existence of charge-trapping defects and interfaces. The future challenges and potential breakthroughs will also be outlined.en_US
dc.language.isoenen_US
dc.relation.ispartofPhysical Chemistry Chemical Physicsen_US
dc.rights© 2018 the Owner Societies. All rights reserved.en_US
dc.subjectEngineering::Materialsen_US
dc.titleSolution-processed resistive switching memory devices based on hybrid organic-inorganic materials and compositesen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen_US
dc.identifier.doi10.1039/c8cp03945c-
dc.identifier.pmid30204170-
dc.identifier.scopus2-s2.0-85054068716-
dc.identifier.issue37en_US
dc.identifier.volume20en_US
dc.identifier.spage23837en_US
dc.identifier.epage23846en_US
dc.subject.keywordsSwitching Systemen_US
dc.subject.keywordsHybriden_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
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