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dc.contributor.authorJohn, Rohit Abharamen_US
dc.contributor.authorLiu, Fucaien_US
dc.contributor.authorChien, Nguyen Anhen_US
dc.contributor.authorKulkarni, Mohit Rameshchandraen_US
dc.contributor.authorZhu, Chaoen_US
dc.contributor.authorFu, Qundongen_US
dc.contributor.authorBasu, Arindamen_US
dc.contributor.authorLiu, Zhengen_US
dc.identifier.citationJohn, R. A., Liu, F., Chien, N. A., Kulkarni, M. R., Zhu, C., Fu, Q., . . . Mathews, N. (2018). Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity. Advanced Materials, 30(25), 1800220-. doi:10.1002/adma.201800220en_US
dc.description.abstractEmulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (TMDC) (MoS2) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics / neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed, (ii) ionotronic-mode: where electronic responses are modulated via ionic gating and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multi-gated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve “plasticity of plasticity-metaplasticity” via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Co-existence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.relation.ispartofAdvanced Materialsen_US
dc.rights© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.titleSynergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticityen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.researchEnergy Research Institute @ NTU (ERI@N)en_US
dc.description.versionAccepted versionen_US
dc.subject.keywords2D Chalcogenidesen_US
dc.subject.keywordsAssociative Learningen_US
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