Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138341
Title: Regulating vertical domains distribution in ruddlesden-popper perovskites for electroluminescence devices
Authors: Yantara, Natalia
Jamaludin, Nur Fadilah
Febriansyah, Benny
Bruno, Annalisa
Tay, Yeow Boon
Mathews, Nripan
Mhaisalkar, Subodh
Keywords: Engineering::Materials
Issue Date: 2019
Source: Yantara, N., Jamaludin, N. F., Febriansyah, B., Bruno, A., Tay, Y. B., Mathews, N., & Mhaisalkar, S. (2019). Regulating vertical domains distribution in ruddlesden-popper perovskites for electroluminescence devices. The Journal of Physical Chemistry Letters, 10(24), 7949-7955. doi:10.1021/acs.jpclett.9b03057
Journal: The Journal of Physical Chemistry Letters
Abstract: Efficient perovskite light emitting diodes are designed by employing an ordered vertical domain distribution in quasi 2D perovskites to induce better electron flow to the emitting domains. DMSO is added to the precursor solution to tune the crystallization rate and promote the formation of high m domains near the substrate surface via the one step deposition method. Optimized deposition conditions yielding film with favorable energetic landscape for both carrier injection and confinement results in a fourfold EQE enhancement with maximum EQE of 5.79%. Better carrier injection is further supported by turn on voltage value that is comparable to the bandgap of the emitter material (~2.25 eV).
URI: https://hdl.handle.net/10356/138341
ISSN: 1948-7185
DOI: 10.1021/acs.jpclett.9b03057
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpclett.9b03057
Fulltext Permission: embargo_20201226
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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