Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138354
Title: D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS
Authors: Liang, Yuan
Yu, Hao
Boon, Chirn Chye
Li, Chenyang
Kissinger, Dietmar
Wang, Yong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Liang, Y., Yu, H., Boon, C. C., Li, C., Kissinger, D., & Wang, Y. (2018). D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS. Proceedings of the ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 142-145. doi:10.1109/ESSCIRC.2018.8494264
Project: MOE RG86/16
Abstract: High extinction ratio (ER) modulator and high output power source are demonstrated in 65 nm CMOS by generating the surface-wave at D-band. By introducing sub-wavelength periodic corrugation structure, surface plasmon polariton (SPP) is established to propagate TM-mode signal with strongly localized surface-wave, significantly reducing the radiation loss at sub-THz. A high-Q surface-wave resonator is formed by periodically drilling grooves onto split ring resonator (SRR) unit-cells with interleaving placement. Modulation is realized by tuning the inner ring of the stacked SRR. A four-ways power combined fundamental 80 GHz coupled-oscillator-network (CON) is realized by incorporating the surface-wave resonator unit-cell, which is frequency doubled to 160 GHz. Measured results show that modulator achieves the best isolation and ER under the smallest area, and the proposed CON achieves high power efficiency and power density.
URI: https://hdl.handle.net/10356/138354
DOI: 10.1109/ESSCIRC.2018.8494264
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ESSCIRC.2018.8494264
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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