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Title: Ultralow power dual-gated subthreshold oxide neuristors : an enabler for higher order neuronal temporal correlations
Authors: John, Rohit Abharam
Tiwari, Nidhi
Chen, Yaoyi
Tiwari, Naveen
Kulkarni, Mohit
Nirmal, Amoolya
Nguyen, Anh Chien
Basu, Arindam
Mathews, Nripan
Keywords: Engineering::Materials
Issue Date: 2018
Source: John, R. A., Tiwari, N., Chen, Y., Ankit, Tiwari, N., Kulkarni, M., . . . Mathews, N. (2018). Ultralow power dual-gated subthreshold oxide neuristors : an enabler for higher order neuronal temporal correlations. ACS nano, 12(11), 11263-11273. doi:10.1021/acsnano.8b05903
Journal: ACS Nano
Abstract: Inspired by neural computing, the pursuit of ultralow power neuromorphic architectures with highly distributed memory and parallel processing capability has recently gained more traction. However, emulation of biological signal processing via artificial neuromorphic architectures does not exploit the immense interplay between local activities and global neuromodulations observed in biological neural networks and hence are unable to mimic complex biologically plausible adaptive functions like heterosynaptic plasticity and homeostasis. Here, we demonstrate emulation of complex neuronal behaviors like heterosynaptic plasticity, homeostasis, association, correlation, and coincidence in a single neuristor via a dual-gated architecture. This multiple gating approach allows one gate to capture the effect of local activity correlations and the second gate to represent global neuromodulations, allowing additional modulations which augment their plasticity, enabling higher order temporal correlations at a unitary level. Moreover, the dual-gate operation extends the available dynamic range of synaptic conductance while maintaining symmetry in the weight-update operation, expanding the number of accessible memory states. Finally, operating neuristors in the subthreshold regime enable synaptic weight changes with high gain while maintaining ultralow power consumption of the order of femto-Joules.
ISSN: 1936-0851
DOI: 10.1021/acsnano.8b05903
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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