Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138442
Title: Grain size modulation and interfacial engineering of CH3NH3PbBr3 emitter films through incorporation of tetraethylammonium bromide
Authors: Nur Fadilah Jamaludin
Yantara, Natalia
Ng, Yan Fong
Li, Mingjie
Goh, Teck Wee
Thirumal, Krishnamoorthy
Sum, Tze Chien
Mathews, Nripan
Soci, Cesare
Mhaisalkar, Subodh
Keywords: Engineering::Materials::Energy materials
Issue Date: 2018
Source: Nur Fadilah Jamaludin., Yantara, N., Ng, Y. F., Li, M., Goh, T. W., Thirumal, K., . . . Mhaisalkar, S. (2018). Grain size modulation and interfacial engineering of CH3NH3PbBr3 emitter films through incorporation of tetraethylammonium bromide. ChemPhysChem, 19(9), 1075-1080. doi:10.1002/cphc.201701380
Journal: ChemPhysChem
Abstract: Metal halide perovskites have demonstrated breakthrough performances as absorber and emitter materials for photovoltaic and display applications respectively. However, despite the low manufacturing cost associated with solution‐based processing, the propensity for defect formation with this technique has led to an increasing need for defect passivation. Here, we present an inexpensive and facile method to remedy surface defects through a postdeposition treatment process using branched alkylammonium cation species. The simultaneous realignment of interfacial energy levels upon incorporation of tetraethylammonium bromide onto the surface of CH3NH3PbBr3 films contributes favorably toward the enhancement in overall light‐emitting diode characteristics, achieving maximum luminance, current efficiency, and external quantum efficiency values of 11 000 cd m−2, 0.68 cd A−1, and 0.16 %, respectively.
URI: https://hdl.handle.net/10356/138442
ISSN: 1439-4235
DOI: 10.1002/cphc.201701380
Rights: @ 2018 Wiley‐VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in ChemPhysChem and is made available with permission of Wiley‐VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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