Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138538
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dc.contributor.authorWang, Yueen_US
dc.contributor.authorWang, Bingen_US
dc.contributor.authorEow, Desmond Fu Shenen_US
dc.contributor.authorMichel, Jurgenen_US
dc.contributor.authorLee, Kenneth Eng Kianen_US
dc.contributor.authorYoon, Soon Fatten_US
dc.contributor.authorFitzgerald, Eugene A.en_US
dc.contributor.authorTan , Chuan Sengen_US
dc.contributor.authorLee, Kwang Hongen_US
dc.date.accessioned2020-05-08T01:16:35Z-
dc.date.available2020-05-08T01:16:35Z-
dc.date.issued2018-
dc.identifier.citationWang, Y., Wang, B., Eow, D. F. S., Michel, J., Lee, K. E. K., Yoon, S. F., . . . Lee, K. H. (2018). Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer. Semiconductor Science and Technology, 33(10), 104004-. doi:10.1088/1361-6641/aadc27en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttps://hdl.handle.net/10356/138538-
dc.description.abstractPerformance of GaInP/AlGaInP multi-quantum wells light-emitting diodes (LEDs) grown on low threading dislocation density (TDD) Germanium-on-Silicon (Ge/Si) substrates are compared and studied. Three approaches are used to realize the low TDD Ge/Si substrates. The first approach is the two-step growth of Ge/Si substrate with TDD of ∼5 ×107 cm-2. The second approach is through doped the Ge seed layer with arsenic (As) and TDD of <5 ×106 cm-2 can be achieved. The third approach is through wafer bonding and layer transfer techniques, germanium-on-insulator (GOI) substrate with TDD of ∼1.2 ×106 cm-2 can be fabricated. To demonstrate the quality of these Ge/Si substrates, LEDs fabricated on commercially available Ge/Si and bulk Ge substrates were also included for comparison purposes. The LEDs fabricated on the As-doped Ge/Si and GOI substrates exhibit superior performances, with output light intensity at least 2× higher compared to devices fabricated on commercially available Ge/Si substrate. These findings enable the monolithic integration of visible-band optical sources with Si-based control circuitry.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.language.isoenen_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.rights© 2018 IOP Publishing Ltd. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titlePerformance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layeren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchSingapore-MIT Alliance Programmeen_US
dc.identifier.doi10.1088/1361-6641/aadc27-
dc.identifier.scopus2-s2.0-85054674227-
dc.identifier.issue10en_US
dc.identifier.volume33en_US
dc.subject.keywordsLow TDDen_US
dc.subject.keywordsGOIen_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
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