Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138539
Title: MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS
Authors: Loke, Wan Khai
Lee, Kwang Hong
Wang, Yue
Tan, Chuan Seng
Fitzgerald, Eugene A.
Yoon, Soon Fatt
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Loke, W. K., Lee, K. H., Wang, Y., Tan, C. S., Fitzgerald, E. A., & Yoon, S. F. (2018). MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS. Semiconductor Science and Technology, 33(11), 115011-. doi:10.1088/1361-6641/aae247
Journal: Semiconductor Science and Technology
Abstract: Heterojunction bipolar transistors (HBTs) with an In0.49Ga0.51P emitter and a GaAs base and collector were fabricated on epitaxial films grown directly onto Si substrates using a thin germanium (100%) buffer layer. All the materials (Ge, GaAs, In0.49Ga0.51P) were grown epitaxially using metal-organic chemical vapor deposition. The thin germanium buffer layer has a threading dislocation density (TDD) of ∼3 × 107 cm-2. The TDD of the active device layers does not worsen and is maintained at ∼2 × 107 cm-2, based on the density of dark spots detected in an electron-beam-induced current plan view image. Although the TDD is high, a DC current gain of 95 can be achieved by the In0.49Ga0.51P/GaAs HBT on a Si substrate. In addition, collector current and base current ideality factors (n c and n b) of 1.07 and 1.23, respectively, and average breakdown voltage (BV cbo) of 14.2 V can be realized. These results enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si CMOS transistors on a common Si platform.
URI: https://hdl.handle.net/10356/138539
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aae247
Rights: © 2018 IOP Publishing Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.