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|Title:||MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS||Authors:||Loke, Wan Khai
Lee, Kwang Hong
Tan, Chuan Seng
Fitzgerald, Eugene A.
Yoon, Soon Fatt
|Keywords:||Engineering::Electrical and electronic engineering||Issue Date:||2018||Source:||Loke, W. K., Lee, K. H., Wang, Y., Tan, C. S., Fitzgerald, E. A., & Yoon, S. F. (2018). MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS. Semiconductor Science and Technology, 33(11), 115011-. doi:10.1088/1361-6641/aae247||Journal:||Semiconductor Science and Technology||Abstract:||Heterojunction bipolar transistors (HBTs) with an In0.49Ga0.51P emitter and a GaAs base and collector were fabricated on epitaxial films grown directly onto Si substrates using a thin germanium (100%) buffer layer. All the materials (Ge, GaAs, In0.49Ga0.51P) were grown epitaxially using metal-organic chemical vapor deposition. The thin germanium buffer layer has a threading dislocation density (TDD) of ∼3 × 107 cm-2. The TDD of the active device layers does not worsen and is maintained at ∼2 × 107 cm-2, based on the density of dark spots detected in an electron-beam-induced current plan view image. Although the TDD is high, a DC current gain of 95 can be achieved by the In0.49Ga0.51P/GaAs HBT on a Si substrate. In addition, collector current and base current ideality factors (n c and n b) of 1.07 and 1.23, respectively, and average breakdown voltage (BV cbo) of 14.2 V can be realized. These results enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si CMOS transistors on a common Si platform.||URI:||https://hdl.handle.net/10356/138539||ISSN:||0268-1242||DOI:||10.1088/1361-6641/aae247||Rights:||© 2018 IOP Publishing Ltd. All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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