Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138700
Title: Self-gating in semiconductor electrocatalysis
Authors: He, Yongmin
He, Qiyuan
Wang, Luqing
Zhu, Chao
Golani, Prafful
Handoko, Albertus D
Yu, Xuechao
Gao, Caitian
Ding, Mengning
Wang, Xuewen
Liu, Fucai
Zeng, Qingsheng
Yu, Peng
Guo, Shasha
Yakobson, Boris I
Wang, Liang
Seh, Zhi Wei
Zhang, Zhuhua
Wu, Minghong
Wang, Qi Jie
Zhang, Hua
Liu, Zheng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: He, Y., He, Q., Wang, L., Zhu, C., Golani, P., Handoko, A. D., . . . Liu, Z. (2019). Self-gating in semiconductor electrocatalysis, Nature Materials, 18(10), 1098–1104. doi:10.1038/s41563-019-0426-0
Journal: Nature Materials
Abstract: The semiconductor-electrolyte interface dominates the behaviours of semiconductor electrocatalysis, which has been modelled as a Schottky-analogue junction according to classical electron transfer theories. However, this model cannot be used to explain the extremely high carrier accumulations in ultrathin semiconductor catalysis observed in our work. Inspired by the recently developed ion-controlled electronics, we revisit the semiconductor-electrolyte interface and unravel a universal self-gating phenomenon through microcell-based in situ electronic/electrochemical measurements to clarify the electronic-conduction modulation of semiconductors during the electrocatalytic reaction. We then demonstrate that the type of semiconductor catalyst strongly correlates with their electrocatalysis; that is, n-type semiconductor catalysts favour cathodic reactions such as the hydrogen evolution reaction, p-type ones prefer anodic reactions such as the oxygen evolution reaction and bipolar ones tend to perform both anodic and cathodic reactions. Our study provides new insight into the electronic origin of the semiconductor-electrolyte interface during electrocatalysis, paving the way for designing high-performance semiconductor catalysts.
URI: https://hdl.handle.net/10356/138700
ISSN: 1476-1122
DOI: 10.1038/s41563-019-0426-0
Rights: © 2019 The Author(s). All rights reserved. This paper was published by Springer Nature Limited in Nature Materials and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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