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Title: Electrostatic force-driven oxide heteroepitaxy for interface control
Authors: Ren, Zhaohui
Wu, Mengjiao
Chen, Xing
Li, Wei
Li, Ming
Wang, Fang
Tian, He
Chen, Junze
Xie, Yanwu
Mai, Jiangquan
Li, Xiang
Lu, Xinhui
Lu, Yunhao
Zhang, Hua
Van Tendeloo, Gustaaf
Zhang, Ze
Han, Gaorong
Keywords: Engineering::Materials
Issue Date: 2018
Source: Ren, Z., Wu, M., Chen, X., Li, W., Li, M., Wang, F., . . . Han, G. (2018). Electrostatic force-driven oxide heteroepitaxy for interface control. Advanced Materials, 30(38), 1707017-. doi:10.1002/adma.201707017
Journal: Advanced Materials
Abstract: Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.
ISSN: 0935-9648
DOI: 10.1002/adma.201707017
Rights: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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