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Title: Abnormal near-infrared absorption in 2D black phosphorus induced by Ag nanoclusters surface functionalization
Authors: Hu, Zehua
Li, Qiang
Lei, Bo
Wu, Jing
Zhou, Qionghua
Gu, Chengding
Wen, Xinglin
Wang, Junyong
Liu, Yanpeng
Li, Shisheng
Zheng, Yue
Lu, Junpeng
He, Jun
Wang, Li
Xiong, Qihua
Wang, Jinlan
Chen, Wei
Keywords: Science::Physics
Issue Date: 2018
Source: Hu, Z., Li, Q., Lei, B., Wu, J., Zhou, Q., Gu, C., . . . Chen, W. (2018). Abnormal near-infrared absorption in 2D black phosphorus induced by Ag nanoclusters surface functionalization. Advanced Materials, 30(43), 1801931-. doi:10.1002/adma.201801931
Journal: Advanced Materials
Abstract: Black phosphorus (BP), as a fast emerging 2D material, shows promising potential in near-infrared (NIR) photodetection owing to its relatively small direct thickness-dependent bandgaps. However, the poor NIR absorption due to the atomically thin nature strongly hinders the practical application. In this study, it is demonstrated that surface functionalization of Ag nanoclusters on 2D BP can induce an abnormal NIR absorption at ≈746 nm, leading to ≈35 (138) times enhancement in 808 (730) nm NIR photoresponse for BP-based field-effect transistors. First-principles calculations reveal that localized bands are introduced into the bandgap of BP, serving as the midgap states, which create new transitions to the conduction band of BP and eventually lead to the abnormal absorption. This work provides a simple yet effective method to dramatically increase the NIR absorption of BP, which is crucial for developing high-performance NIR optoelectronic devices.
ISSN: 0935-9648
DOI: 10.1002/adma.201801931
Rights: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles


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