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Title: Large-area atomic layers of the charge-density-wave conductor TiSe2
Authors: Wang, Hong
Chen, Yu
Duchamp, Martial
Zeng, Qingsheng
Wang, Xuewen
Tsang, Siu Hon
Li, Hongling
Jing, Lin
Yu, Ting
Teo, Edwin Hang Tong
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2018
Source: Wang, H., Chen, Y., Duchamp, M., Zeng, Q., Wang, X., Tsang, S. H., . . . Liu, Z. (2018). Large-area atomic layers of the charge-density-wave conductor TiSe2. Advanced Materials, 30(8), 1704382-. doi:10.1002/adma.201704382
Journal: Advanced Materials
Abstract: Layered transition metal (Ti, Ta, Nb, etc.) dichalcogenides are important prototypes for the study of the collective charge density wave (CDW). Reducing the system dimensionality is expected to lead to novel properties, as exemplified by the discovery of enhanced CDW order in ultrathin TiSe2 . However, the syntheses of monolayer and large-area 2D CDW conductors can currently only be achieved by molecular beam epitaxy under ultrahigh vacuum. This study reports the growth of monolayer crystals and up to 5 × 105 µm2 large films of the typical 2D CDW conductor-TiSe2 -by ambient-pressure chemical vapor deposition. Atomic resolution scanning transmission electron microscopy indicates the as-grown samples are highly crystalline 1T-phase TiSe2 . Variable-temperature Raman spectroscopy shows a CDW phase transition temperature of 212.5 K in few layer TiSe2 , indicative of high crystal quality. This work not only allows the exploration of many-body state of TiSe2 in 2D limit but also offers the possibility of utilizing large-area TiSe2 in ultrathin electronic devices.
ISSN: 0935-9648
DOI: 10.1002/adma.201704382
Rights: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles


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