Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/138992
Title: The Auger process in multilayer WSe2 crystals
Authors: Li, Yuanzheng
Shi, Jia
Chen, Heyu
Wang, Rui
Mi, Yang
Zhang, Cen
Du, Wenna
Zhang, Shuai
Liu, Zheng
Zhang, Qing
Qiu, Xiaohui
Xu, Haiyang
Liu, Weizhen
Liu, Yichun
Liu, Xinfeng
Keywords: Engineering::Materials
Issue Date: 2018
Source: Li, Y., Shi, J., Chen, H., Wang, R., Mi, Y., Zhang C., . . . Liu, X. (2018). The Auger process in multilayer WSe2 crystals. Nanoscale, 10(37), 17585--17592. doi:10.1039/c8nr02567c
Journal: Nanoscale
Abstract: Multilayer WSe2 with a larger optical density of states and absorbance is regarded as a better candidate than its monolayer counterpart for next generation optoelectronic devices, however insight into carrier dynamics is still lacking. Herein, we experimentally observed an anomalous PL quenching with decreasing temperature for multilayer WSe2. At a low temperature (77 K), the Auger processes govern carrier recombination in multilayer WSe2, which are induced by a phonon bottleneck effect and strong photon absorption, and lead to PL quenching. From transient absorption spectroscopy, two distinct Auger processes are observed: a fast one (1-2 ps) and a slow one (>190 ps), which are caused by two different deep midgap defect-levels in WSe2. Based on the Auger recombination model, these two Auger rates are quantitatively estimated at ∼6.69 (±0.05) × 10-2 and 1.22 (±0.04) × 10-3 cm2 s-1, respectively. Our current observations provide an important supplement for optimizing the optical and electric behaviors in multilayer WSe2 based devices.
URI: https://hdl.handle.net/10356/138992
ISSN: 2040-3364
DOI: 10.1039/c8nr02567c
Rights: © 2018 The Royal Society of Chemistry. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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