Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139037
Title: Domain wall motion control for racetrack memory applications
Authors: Kumar, Durgesh
Jin, Tianli
Al Risi, S.
Sbiaa, Rachid
Lew, Wen Siang
Piramanayagam, S. N.
Keywords: Science::Physics
Issue Date: 2019
Source: Kumar, D., Jin, T., Al Risi, S., Sbiaa, R., Lew, W. S., & Piramanayagam, S. N. (2019). Domain wall motion control for racetrack memory applications. IEEE Transactions on Magnetics, 55(3), 2300708-. doi:10.1109/TMAG.2018.2876622
Journal: IEEE Transactions on Magnetics
Abstract: Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in many applications, as they are approximately 5-10 times cheaper than SSDs. Attempts are being made to increase the capacity of HDDs by technologies such as heat-assisted magnetic recording and microwave assisted magnetic recording. However, increasing the capacity has been a slow process and there are limitations in achieving areal density above 10 Tbpsi. Thus, the introduction of new technologies is important for attaining high capacity. In this scenario, domain wall (DW) memory is a potential candidate, but there are still many unsolved issues. One of these is ensuring controlled and reliable motion of DWs along the nanowire. In this paper, we provide an overview of existing technologies and our attempts to control DW motion. Many methods of fabricating pinning centers have been proposed and demonstrated. These methods can mainly be categorized as 1) geometrical and 2) non-geometrical methods. In the first part, we review the geometrical approach to pin DWs. Later, we provide an overview of our approaches to create pinning centers using non-geometrical means. Non-geometrical approach provides more advantages as it provides a variety of choices to tailor the properties. In particular, this approach suits scalability.
URI: https://hdl.handle.net/10356/139037
ISSN: 0018-9464
DOI: 10.1109/TMAG.2018.2876622
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TMAG.2018.2876622.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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