Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139089
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dc.contributor.authorChai, Zhen Hongen_US
dc.date.accessioned2020-05-15T05:59:43Z-
dc.date.available2020-05-15T05:59:43Z-
dc.date.issued2020-
dc.identifier.urihttps://hdl.handle.net/10356/139089-
dc.description.abstractNeuromorphic systems inspired by the brain have gained much popularity in the computing world for its potential energy-efficient computation. To fully realisse a developed neuromorphic hardware application, large-scale integration of artificial synapses onto a single computing chip is required. In this work, electrical measurements were conducted on commercial level TiN/HfO2 gated n-channel MOSFET transistor (with an equivalent oxide thickness of 1.7nm) to demonstrate that it can exhibit some critical synaptic characteristics of a biological synapse such as excitatory and inhibitory postsynaptic current (EPSC and IPSC), short-term plasticity (STP) and long-term potentiation (LTP), metaplasticity, and spike timing dependent plasticity (STDP). The mechanism behind the output characteristic of MOSFET to exhibit synaptic-like response is the charge trapping and de-trapping at defects in the oxide and oxide/semiconductor interface. The readily available CMOS transistor can be a potential fundamental building block for an artificial neural network to drive towards a commercialised neuromorphic system.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.relationA2016-191en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleSynaptic CMOS transistoren_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorAng Diing Shenpen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineering (Electrical and Electronic Engineering)en_US
dc.contributor.supervisoremailedsang@ntu.edu.sgen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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