Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139355
Title: Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates
Authors: Fu, Qundong
Zhu, Chao
Zhao, Xiaoxu
Wang, Xingli
Chaturvedi, Apoorva
Zhu, Chao
Wang, Xiaowei
Zeng, Qingsheng
Zhou, Jiadong
Liu, Fucai
Tay, Beng Kang
Zhang, Hua
Pennycook, Stephen J.
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2019
Source: Fu, Q., Zhu, C., Zhao, X., Wang, X., Chaturvedi, A., Zhu, C., . . ., Liu, Z. (2019). Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates. Advanced materials, 31(1), 1804945-. doi:10.1002/adma.201804945
Journal: Advanced materials
Abstract: 2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2 O2 Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2 O2 Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W-1 , a photoconductive gain of more than 104 , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.
URI: https://hdl.handle.net/10356/139355
ISSN: 0935-9648
DOI: 10.1002/adma.201804945
Rights: This is the accepted version of the following article: Fu, Q., Zhu, C., Zhao, X., Wang, X., Chaturvedi, A., Zhu, C., . . ., Liu, Z. (2019). Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates. Advanced materials, 31(1), 1804945-., which has been published in final form at 10.1002/adma.201804945. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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