Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139394
Title: A design of an all-MOS-transistor low-power low-voltage LDO with an embedded voltage reference
Authors: He, Junsen
Keywords: Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 2020
Publisher: Nanyang Technological University
Project: A2170-191
Abstract: This report shows the whole process of designing a All-MOS Low Dropout (LDO) with embedded voltage reference. This design will provide a output voltage which is independent of temperature, load current changes, supply voltage et al. The final design contains start-up, PTAT generator, two temperature curvature correction circuits, 3-stage error amplifier and a novel transient response circuit. The whole design process is done under virtuoso tool in Linux system. All simulation and design components are from Global Foundries 0.18 um CMOS technology file. The final design has the minimal input voltage of 0.68V with 656.12V output voltage. The line regulation is -3.22mV/V and load regulation 0.0022 mV/mA. PSRR is 52.36dB. The overall average temperature coefficient is 21.5 ppm/°C. The design is stable under light load and heavy load due to the phase margin is larger than 60 degree. The transient response is good but still can improve. However, the supply current is a little high. In the simulation, high current supply can improve the transient response. Besides, the temperature coefficient can still process to reduce to less than 10 ppm/°C.
URI: https://hdl.handle.net/10356/139394
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
A design of an All-MOS-transistor Low-power Low-voltage LDO with an embedded voltage reference.pdf
  Restricted Access
9.13 MBAdobe PDFView/Open

Page view(s)

322
Updated on Feb 4, 2023

Download(s) 50

34
Updated on Feb 4, 2023

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.