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Title: Voltage transient analysis as a generic tool for solar junction characterization
Authors: Prakoso, Ari Bimo
Lu, Chenjin
Cortecchia, Daniele
Soci, Cesare
Berthe, Maxime
Deresmes, Dominique
Ayachi, Boubakeur
Vilcot, Jean-Pierre
Diesinger, Heinrich
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Prakoso, A. B., Lu, C., Rusli., Cortecchia, D., Soci, C., Berthe, M., . . ., Diesinger, H. (2018). Voltage transient analysis as a generic tool for solar junction characterization. Journal of Physics D: Applied Physics, 51(34), 345501-. doi:10.1088/1361-6463/aad274
Journal: Journal of Physics D: Applied Physics
Abstract: Surface photovoltage transients on solar junctions have often been associated with carrier lifetime in the literature. However, the carrier decay in a junction is not governed by a first order carrier decay, but resulting from a differential capacitance interacting with a differential conductivity. This phenomenon is well known as the Kane-Swanson formalism in an engineering context where the carrier density transient is measured by photoconductance with a microwave or infrared beam. In this work, we solve the same differential equations numerically to model the carrier decay in the large signal domain extending over five orders of carrier density. Since the surface voltage is linked to the carrier density by a logarithmic relation, we express the carrier decay as surface photovoltage transients. We show how from photovoltage transients, the same information as from photoconductance can be drawn. To demonstrate the method as a generic tool, it is applied to four types of solar cells, two monocrystalline silicon cells, a Perovskite solar cell, a transition metal oxide/silicon hybrid junction, and a CIGS solar cell. Acquiring photovoltage transients by Kelvin force microscopy allows working on partial junctions without top contact, speeding up research of future photovoltaic materials. Furthermore, parameters may be mapped with a better lateral resolution compared to microwave photoconductance.
ISSN: 0022-3727
DOI: 10.1088/1361-6463/aad274
Rights: © 2018 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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