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|Title:||Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings||Authors:||Li, Yang
|Keywords:||Engineering::Materials||Issue Date:||2018||Source:||Li, Y., Zhang, C., Gu, P., Wang, Z., Li, Z., Li, H., . . . Zhang, Q. (2018). Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings. Chemistry - A European Journal, 24(31), 7845-7851. doi:10.1002/chem.201801146||Journal:||Chemistry - A European Journal||Abstract:||The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n≥10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics.||URI:||https://hdl.handle.net/10356/139410||ISSN:||0947-6539||DOI:||10.1002/chem.201801146||Rights:||This is the accepted version of the following article: Li, Y., Zhang, C., Gu, P., Wang, Z., Li, Z., Li, H., . . . Zhang, Q. (2018). Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings. Chemistry - A European Journal, 24(31), 7845-7851, which has been published in final form at dx.doi.org/10.1002/chem.201801146. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html].||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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