Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139567
Title: High-efficiency all-inorganic full-colour quantum dot light-emitting diodes
Authors: Yang, Xuyong
Zhang, Zi-Hui
Ding, Tao
Wang, Ning
Chen, Guo
Dang, Cuong
Demir, Hilmi Volkan
Sun, Xiao Wei
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Yang, X., Zhang, Z.-H., Ding, T., Wang, N., Chen, G., Dang, C., . . . Sun, X. W. (2018). High-efficiency all-inorganic full-colour quantum dot light-emitting diodes. Nano Energy, 46, 229-233. doi:10.1016/j.nanoen.2018.02.002
Journal: Nano Energy
Abstract: All-inorganic quantum dot light-emitting diodes (QLEDs) with excellent device stability have attracted significant attention for solid state lighting and flat panel display applications. However, the performance for the present all-inorganic QLEDs is far inferior to that of the well-developed QLEDs with organic charge transport layers. Our all-inorganic full-colour QLEDs show the maximum brightness and efficiency values of 21,600 cd/m2 and 6.52%, respectively, which are record-breaking among the existing all-inorganic QLEDs. The outstanding performance is achieved by an efficient design of device architecture with solution-processed charge transport layers (CTLs). Meanwhile, the ultrathin double-sided insulating layers are inserted between the quantum dot emissive layer and their adjacent oxide electron transport layers to better balance charge injection in the device and reduce the quenching effects for inorganic CTLs on QD emission. This study is the first account for high-performance, all-inorganic QLEDs insightfully offering detailed investigations into the performance promotion for inorganic electroluminescent devices.
URI: https://hdl.handle.net/10356/139567
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2018.02.002
Rights: © 2018 Elsevier Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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