Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139570
Title: Nanocrystal light-emitting diodes based on type II nanoplatelets
Authors: Liu, Baiquan
Delikanli, Savas
Gao, Yuan
Dede, Didem
Gungor, Kivanc
Demir, Hilmi Volkan
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Liu, B., Delikanli, S., Gao, Y., Dede, D., Gungor, K., & Demir, H. V. (2018). Nanocrystal light-emitting diodes based on type II nanoplatelets. Nano Energy, 47, 115-122. doi:10.1016/j.nanoen.2018.02.004
Journal: Nano Energy
Abstract: Colloidal semiconductor nanoplatelets (NPLs) have recently emerged as a new family of semiconductor nanocrystals with distinctive structural and electronic properties originating from their atomically flat architecture. To date, type II NPLs have been demonstrated to possess great potential to optoelectronic applications, such as solar cells and lasers. Herein, nanocrystal light-emitting diodes (LEDs) based on type II NPLs have been developed. The photoluminescence quantum yield of these used type II NPL (CdSe/CdSe0.8Te0.2 core/crown) is close to 85%. By exploring an effective inverted structure with the dual hole transport layer, the NPL-LEDs exhibit i) a turn-on voltage of 1.9 V, ii) a maximum luminance of 34520 cd m−2, iii) an EQE of 3.57% and a PE of 9.44 lm W−1. Compared with previous NPL-based LEDs, the performance of our devices is remarkably enhanced. For example, the luminance is 350-fold higher than the best inverted NPL-based LED. The findings may not only represent a significant step for NPL-based LEDs, but also unlock a new opportunity that this class of type II NPLs materials are promising for developing high-performance LEDs.
URI: https://hdl.handle.net/10356/139570
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2018.02.004
Rights: © 2018 Elsevier Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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