Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139668
Title: Oxide-based RRAM materials for neuromorphic computing
Authors: Hong, XiaoLiang
Loy, Desmond JiaJun
Dananjaya, Putu Andhita
Tan, Funan
Ng, CheeMang
Lew, WenSiang
Keywords: Science::Physics
Issue Date: 2018
Source: Hong, X., Loy, D. J., Dananjaya, P. A., Tan, F., Ng, C., & Lew, W. (2018). Oxide-based RRAM materials for neuromorphic computing. Journal of Materials Science, 53(12), 8720-8746. doi:10.1007/s10853-018-2134-6
Journal: Journal of Materials Science
Abstract: In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.
URI: https://hdl.handle.net/10356/139668
ISSN: 0022-2461
DOI: 10.1007/s10853-018-2134-6
Schools: School of Electrical and Electronic Engineering 
School of Physical and Mathematical Sciences 
Rights: © 2018 Springer Science+Business Media, LLC, part of Springer Nature. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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