Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/139668
Title: | Oxide-based RRAM materials for neuromorphic computing | Authors: | Hong, XiaoLiang Loy, Desmond JiaJun Dananjaya, Putu Andhita Tan, Funan Ng, CheeMang Lew, WenSiang |
Keywords: | Science::Physics | Issue Date: | 2018 | Source: | Hong, X., Loy, D. J., Dananjaya, P. A., Tan, F., Ng, C., & Lew, W. (2018). Oxide-based RRAM materials for neuromorphic computing. Journal of Materials Science, 53(12), 8720-8746. doi:10.1007/s10853-018-2134-6 | Journal: | Journal of Materials Science | Abstract: | In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field. | URI: | https://hdl.handle.net/10356/139668 | ISSN: | 0022-2461 | DOI: | 10.1007/s10853-018-2134-6 | Schools: | School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences |
Rights: | © 2018 Springer Science+Business Media, LLC, part of Springer Nature. All rights reserved. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | SPMS Journal Articles |
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