Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139759
Title: Field emission properties of SiO2-wrapped CNT field emitter
Authors: Lim, Yu Dian
Hu, Liangxing
Xia, Xin
Ali, Zishan
Wang, Shaomeng
Tay, Beng Kang
Aditya, Sheel
Miao, Jianmin
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Lim, Y. D., Hu, L., Xia, X., Ali, Z., Wang, S., Tay, B. K., . . . Miao, J. (2018). Field emission properties of SiO2-wrapped CNT field emitter. Nanotechnology, 29(1), 015202-. doi:10.1088/1361-6528/aa96ed
Journal: Nanotechnology
Abstract: Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO2-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO2-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO2-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm-1 to achieve FE current density of 22 mA cm-2; whereas SiO2-wrapped field emitter requires 8.5 V μm-1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO2, as obtained from the electric field simulation. Nevertheless, SiO2-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO2-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO2-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.
URI: https://hdl.handle.net/10356/139759
ISSN: 0957-4484
DOI: 10.1088/1361-6528/aa96ed
Rights: © 2017 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6528/aa96ed
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations

5
Updated on Mar 2, 2021

PublonsTM
Citations

2
Updated on Mar 7, 2021

Page view(s)

17
Updated on Mar 8, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.