Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139839
Title: γ-ray radiation effects on an HfO2-based resistive memory device
Authors: Hu, Shaogang
Liu, Yang Liu
Chen, Tupei
Guo, Qi
Li, Yu-Dong
Zhang, Xing-Yao
Deng, L.J.
Yu, Qi
Yin, You
Hosaka, Sumio
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Hu, S., Liu, Y. L., Chen, T., Guo, Q., Li, Y.-D., Zhang, X.-Y., . . . Hosaka, S, (2018). γ-ray radiation effects on an hfo2-based resistive memory device. IEEE Transactions on Nanotechnology, 17(1), 61-64. doi:10.1109/tnano.2017.2661818
Journal: IEEE Transactions on Nanotechnology
Abstract: In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by γ-ray radiation can hardly influence the proper function of the device. The γ-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good γ-ray radiation-resistant capability.
URI: https://hdl.handle.net/10356/139839
ISSN: 1536-125X
DOI: 10.1109/TNANO.2017.2661818
Rights: © 2017 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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