Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/139839
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dc.contributor.authorHu, Shaogangen_US
dc.contributor.authorLiu, Yang Liuen_US
dc.contributor.authorChen, Tupeien_US
dc.contributor.authorGuo, Qien_US
dc.contributor.authorLi, Yu-Dongen_US
dc.contributor.authorZhang, Xing-Yaoen_US
dc.contributor.authorDeng, L.J.en_US
dc.contributor.authorYu, Qien_US
dc.contributor.authorYin, Youen_US
dc.contributor.authorHosaka, Sumioen_US
dc.date.accessioned2020-05-22T04:03:24Z-
dc.date.available2020-05-22T04:03:24Z-
dc.date.issued2017-
dc.identifier.citationHu, S., Liu, Y. L., Chen, T., Guo, Q., Li, Y.-D., Zhang, X.-Y., . . . Hosaka, S, (2018). γ-ray radiation effects on an hfo2-based resistive memory device. IEEE Transactions on Nanotechnology, 17(1), 61-64. doi:10.1109/tnano.2017.2661818en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttps://hdl.handle.net/10356/139839-
dc.description.abstractIn this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by γ-ray radiation can hardly influence the proper function of the device. The γ-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good γ-ray radiation-resistant capability.en_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Transactions on Nanotechnologyen_US
dc.rights© 2017 IEEE. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleγ-ray radiation effects on an HfO2-based resistive memory deviceen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1109/TNANO.2017.2661818-
dc.identifier.scopus2-s2.0-85040722914-
dc.identifier.issue1en_US
dc.identifier.volume17en_US
dc.identifier.spage61en_US
dc.identifier.epage64en_US
dc.subject.keywordsγ Rayen_US
dc.subject.keywordsHafnium Oxideen_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
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