Resistive switching devices based on halide perovskites

Abstract

In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quality films, several methods were deployed such as increasing the stirring time of the solution during the preparation phase, increasing the precursors DMF/DMSO ratio, conducting the experiments in a different environment (glove box), coating the substrate multiple times, and the variations of thickness of films coated. The results will be described in detail and following which, improvements to be made in the future.