Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140103
Title: Unidirectional threshold switching induced by Cu migration with high selectivity and ultralow OFF current under gradual electroforming treatment
Authors: Dananjaya, Putu Andhita
Loy, Desmond Jia Jun
Chow, Samuel Chen Wai
Lew, Wen Siang
Keywords: Science::Physics
Issue Date: 2019
Source: Dananjaya, P. A., Loy, D. J. J., Chow, S. C. W., & Lew, W. S. (2019). Unidirectional threshold switching induced by Cu migration with high selectivity and ultralow OFF current under gradual electroforming treatment. ACS Applied Electronic Materials, 1(10), 2076-2085. doi:10.1021/acsaelm.9b00446
Journal: ACS Applied Electronic Materials
Abstract: A gradual electroforming process was implemented on the pristine Pt/HfOx/Cu/Pt structure to realize volatile threshold switching characteristics of a diffusive memristor. The reported devices exhibit stable unidirectional threshold switching properties with high selectivity of >107 and ultralow OFF current of ∼100 fA for over 104 endurance cycles. Nucleation theory on spheroidal-shaped metallic filament growth is used to extensively discuss the structural changes of the device after gradual forming treatments by analyzing the applied bias amplitude dependency of the finite delay time required by the device to turn ON under external electric field. On the other hand, the Rayleigh instability model was implemented for the aforementioned spheroidal metallic nucleus to explain the relaxation dynamics of the device. It was shown that the relaxation time of the device depends on the initial profile of the nucleus within the insulating layer. The broadening of the ON current distribution of the device was observed during the device endurance test. This is correlated to the presence of a random telegraph signal (RTS) during the ON state of the device.
URI: https://hdl.handle.net/10356/140103
ISSN: 2637-6113
DOI: 10.1021/acsaelm.9b00446
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.9b00446
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

Files in This Item:
File Description SizeFormat 
ACS_Just Accepted Manuscript.pdf1.54 MBAdobe PDFView/Open

SCOPUSTM   
Citations 50

5
Updated on Jan 29, 2023

Web of ScienceTM
Citations 20

6
Updated on Jan 24, 2023

Page view(s)

198
Updated on Jan 31, 2023

Download(s) 50

58
Updated on Jan 31, 2023

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.