Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140193
Title: Carrier density and light helicity dependence of photocurrent in mono- and bilayer graphene
Authors: Qian, X.
Cao, Bingchen
Wang, Zilong
Shen, Xiaonan
Soci, Cesare
Eginligil, Mustafa
Yu, Ting
Keywords: Engineering::Materials
Issue Date: 2018
Source: Qian, X., Cao, B., Wang, Z., Shen, X., Soci, C., Eginligil, M., & Yu, T. (2018). Carrier density and light helicity dependence of photocurrent in mono- and bilayer graphene. Semiconductor Science and Technology, 33(11), 114008-. doi:10.1088/1361-6641/aae2f1
Journal: Semiconductor Science and Technology
Abstract: Helicity-dependent photocurrent in monolayer graphene has been the subject of intense debate, and was recently ascribed to photon drag and circular photogalvanic effects. Unlike inversion symmetric monolayer graphene with no band gap, the most stable case of two-layer graphene, AB-stacked bilayer graphene, has broken inversion symmetry and can have a band gap upon electrical gating. Here we report the experimental determination of the photocurrent response of mono- and bilayer graphene as a function of light polarization, as well as carrier density and polarity. The mono- and bilayer graphene data show qualitative features in common with the photocurrent contribution that is expected to arise from the photon drag effect. On the other hand, the photocurrent due to the circular photogalvanic effect in bilayer (monolayer) graphene has asymmetric (symmetric) dependence on carrier density, which is attributed to particle-hole asymmetry.
URI: https://hdl.handle.net/10356/140193
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aae2f1
Rights: © 2018 IOP Publishing Ltd. All rights reserved
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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