Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140321
Title: Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
Authors: Ren, Zekun
Thway, Maung
Liu, Zhe
Wang, Yue
Ke, Cangming
Yaung, Kevin Nay
Wang, Bing
Tan, Chuan Seng
Lin, Fen
Aberle, Armin Gerhad
Buonassisi, Tonio
Peters, Ian Marius
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Ren, Z., Thway, M., Liu, Z., Wang, Y., Ke, C., Yaung, K. N., . . . Peters, I. M. (2018). Ultra-thin GaAs double-junction solar cell with carbon-doped emitter. IEEE Journal of Photovoltaics, 8(6), 1627-1634. doi:10.1109/JPHOTOV.2018.2870721
Journal: IEEE Journal of Photovoltaics
Abstract: We address the challenge in depositing ultra-thin GaAs cells (<200 nm) using a more scalable process (metal-organic chemical vapor deposition). We present results for a GaAs/GaAs double-junction solar cell with a 110-nm-thick top cell. Current, voltage, fill factor, and efficiency of this architecture are improved by replacing the zinc doping in the emitter of the top cell with carbon doping. We find that the carbon doping results in a well-defined active junction profile that agrees well with the secondary ion mass spectroscopy measurement. Additionally, we find that the carbon doping coincides with the incorporation of indium in the emitter. We postulate that the incorporation of indium relieves stress in the material, which results in a smoother morphology of the GaAs film. Finally, we show the efficiency achieved with the carbon-doping process is 19.2% for the GaAs/GaAs dual junction cell. The open circuit voltage is 1.087 V for the ultra-thin (110 nm) GaAs top cell and 2.08 V for the dual junction cell.
URI: https://hdl.handle.net/10356/140321
ISSN: 2156-3381
DOI: 10.1109/JPHOTOV.2018.2870721
Rights: © 2018 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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