Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140362
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dc.contributor.authorZhang, Chaohuaen_US
dc.contributor.authorNg, Hongkuanen_US
dc.contributor.authorLi, Zhongen_US
dc.contributor.authorKhor, Khiam Aiken_US
dc.contributor.authorXiong, Qihuaen_US
dc.date.accessioned2020-05-28T05:22:05Z-
dc.date.available2020-05-28T05:22:05Z-
dc.date.issued2017-
dc.identifier.citationZhang, C., Ng, H., Li, Z., Khor, K. A., & Xiong, Q. (2017). Minority carrier blocking to enhance the thermoelectric performance of solution-processed BixSb2 – xTe3 nanocomposites via a liquid-phase sintering process. ACS Applied Materials & Interfaces, 9(14), 12501-12510. doi:10.1021/acsami.7b01473en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttps://hdl.handle.net/10356/140362-
dc.description.abstractMinority carrier blocking through heterointerface barriers has been theoretically proposed to enhance the thermoelectric figure of merit (ZT) of bismuth telluride based nanocomposites at elevated temperatures recently (Phys. Rev. B2016, 93, 165209). Here, to experimentally realize the minority carrier blocking, a liquid-phase sintering process enabled by excess Te is applied to the solution-processed BixSb2–xTe3 nanocomposites to introduce interfacial energy barriers. The controlling parameters in the liquid-phase sintering process such as the amount of excess Te, sintering temperature and holding time, and the Bi composition (x) are systemically tuned and investigated to fully understand the minority carrier blocking mechanism. These interface-engineering parameters are optimized for introducing maximum lattice imperfections and band-bending interfaces that are responsible for blocking the minority carrier and wide-range scattering of the phonons toward enhanced thermoelectric performance. High ZT > 1.4 at 375 K is realized in the Bi0.5Sb1.5Te3 sample, which is much higher than those of the state-of-the-art commercial ingots (ZT ∼ 1) and other solution-processed nanocomposites. The enhanced ZT at elevated temperatures is mostly due to the suppression of bipolar thermal conductivity by minority carrier blocking as well as the reduction of lattice thermal conductivity. Adapting this solution synthesis process to design favorable heterointerfaces for minority carrier blocking in the liquid-phase sintering process holds promise to further enhance the ZT values.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.language.isoenen_US
dc.relation.ispartofACS Applied Materials & Interfacesen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.7b01473en_US
dc.subjectScience::Physicsen_US
dc.titleMinority carrier blocking to enhance the thermoelectric performance of solution-processed BixSb2 – xTe3 nanocomposites via a liquid-phase sintering processen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doi10.1021/acsami.7b01473-
dc.description.versionAccepted versionen_US
dc.identifier.pmid28318220-
dc.identifier.scopus2-s2.0-85017461968-
dc.identifier.issue14en_US
dc.identifier.volume9en_US
dc.identifier.spage12501en_US
dc.identifier.epage12510en_US
dc.subject.keywordsMinority Carrier Blockingen_US
dc.subject.keywordsLiquid-phase Sinteringen_US
item.fulltextWith Fulltext-
item.grantfulltextopen-
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