Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140386
Title: The overview of the impacts of electron radiation on semiconductor failure analysis by SEM, FIB and TEM
Authors: Liu, Binghai
Hua, Younan
Dong, Zhili
Tan, Pik Kee
Zhao, Yuzhe
Mo, Zhiqiang
Lam, Jeffrey
Mai, Zhihong
Keywords: Engineering::Materials
Issue Date: 2018
Source: Liu, B., Hua, Y., Dong, Z., Tan, P. K., Zhao, Y., Mo, Z., . . . Mai, Z. (2018). The overview of the impacts of electron radiation on semiconductor failure analysis by SEM, FIB and TEM. Proceedings of the 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). doi:10.1109/IPFA.2018.8452485
Abstract: The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.
URI: https://hdl.handle.net/10356/140386
ISBN: 978-1-5386-4930-5
ISSN: 1946-1550
DOI: 10.1109/IPFA.2018.8452485
Rights: © 2018 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Conference Papers

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