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|Title:||The overview of the impacts of electron radiation on semiconductor failure analysis by SEM, FIB and TEM||Authors:||Liu, Binghai
Tan, Pik Kee
|Keywords:||Engineering::Materials||Issue Date:||2018||Source:||Liu, B., Hua, Y., Dong, Z., Tan, P. K., Zhao, Y., Mo, Z., . . . Mai, Z. (2018). The overview of the impacts of electron radiation on semiconductor failure analysis by SEM, FIB and TEM. Proceedings of the 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). doi:10.1109/IPFA.2018.8452485||Abstract:||The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.||URI:||https://hdl.handle.net/10356/140386||ISBN:||978-1-5386-4930-5||ISSN:||1946-1550||DOI:||10.1109/IPFA.2018.8452485||Rights:||© 2018 IEEE. All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Conference Papers|
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