Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140404
Title: Tensile strained ge pseudo-heterostructure quantum wells
Authors: Chen, Mi
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Publisher: Nanyang Technological University
Project: P2038-182
Abstract: Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material recently.[1] Band structures of tensile strained and n+ doped Ge/Ge0.986Si0.014 quantum wells (QWs) are calculated by multiple-band k·p method[7]. In this work, we propose a Ge quantum well (QW) caused by the uniaxial tensile strain, which may be realized by the micro-bridge technique.[2,3] Because the QW is formed by Ge only, it is called as the Ge pseudo-heterostructure QW (PQW).
URI: https://hdl.handle.net/10356/140404
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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