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|Title:||Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices||Authors:||Qian, Haisheng
|Keywords:||Engineering::Electrical and electronic engineering||Issue Date:||2018||Source:||Qian, H., Hu, G., Hu, L., Zhou, X., Liu, R., & Zheng, L. (2018). Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. Proceedings of 2017 IEEE 12th International Conference on ASIC (ASICON), 249-251. doi:10.1109/ASICON.2017.8252459||Abstract:||Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and design tools.||URI:||https://hdl.handle.net/10356/140470||ISBN:||978-1-5090-6626-1||DOI:||10.1109/ASICON.2017.8252459||Rights:||© 2017 IEEE. All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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