Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140470
Title: Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
Authors: Qian, Haisheng
Hu, Guangxi
Hu, Laigui
Zhou, Xing
Liu, Ran
Zheng, Lirong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Qian, H., Hu, G., Hu, L., Zhou, X., Liu, R., & Zheng, L. (2018). Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. Proceedings of 2017 IEEE 12th International Conference on ASIC (ASICON), 249-251. doi:10.1109/ASICON.2017.8252459
Abstract: Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and design tools.
URI: https://hdl.handle.net/10356/140470
ISBN: 978-1-5090-6626-1
DOI: 10.1109/ASICON.2017.8252459
Rights: © 2017 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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