Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/140531
Title: | Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing | Authors: | Ng, Sien John, Rohit Abraham Yang, Jing-ting Mathews, Nripan |
Keywords: | Engineering::Materials | Issue Date: | 2020 | Source: | Ng, S., John, R. A., Yang, J.-t., & Mathews, N. (2020). Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing. ACS Applied Electronic Materials, 2(3), 817-826. doi:10.1021/acsaelm.0c00002 | Project: | MOE2016-T2-1100 MOE2018-T2-2-083 |
Journal: | ACS Applied Electronic Materials | Abstract: | Hardware realization of artificial neural networks (ANNs) requires analogue weights to be encoded into the device conductances via blind update and access operations, leveraging Kirchhoff’s circuit laws. However, most memristive solutions lag behind in this aspect due to numerous device nonidealities, like limited number of addressable states, need for a stringent compliance current control, and an electroforming process. By modulating the oxygen vacancy profile of tin oxide switching elements, here we design and evaluate multistate memristors as synaptic connections for brain-inspired computing. Harnessing the advantages of a forming-less compliance-free operation, our devices display gradual switching transitions across multiple conductance states, sufficing the switching requirements of synaptic connections in an ANN. The soft boundary conditions are analyzed systematically, and spike-based plasticity rules, state-dependent spike-timing-dependent-plasticity (STDP) modulations, ternary digital logic, and analogue updatability schemes are proposed and demonstrated comprehensively to establish the analogue programming window of our memristors. | URI: | https://hdl.handle.net/10356/140531 | ISSN: | 2637-6113 | DOI: | 10.1021/acsaelm.0c00002 | DOI (Related Dataset): | https://doi.org/10.21979/N9/YWTJBM | Schools: | School of Materials Science and Engineering | Research Centres: | Energy Research Institute @ NTU (ERI@N) | Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.0c00002 | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing.pdf | 647.29 kB | Adobe PDF | View/Open |
SCOPUSTM
Citations
50
7
Updated on Mar 13, 2024
Web of ScienceTM
Citations
20
7
Updated on Oct 30, 2023
Page view(s)
224
Updated on Mar 27, 2024
Download(s) 50
97
Updated on Mar 27, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.