Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140531
Title: Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
Authors: Ng, Sien
John, Rohit Abraham
Yang, Jing-ting
Mathews, Nripan
Keywords: Engineering::Materials
Issue Date: 2020
Source: Ng, S., John, R. A., Yang, J.-t., & Mathews, N. (2020). Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing. ACS Applied Electronic Materials, 2(3), 817-826. doi:10.1021/acsaelm.0c00002
Project: MOE2016-T2-1100 
MOE2018-T2-2-083 
Journal: ACS Applied Electronic Materials 
Abstract: Hardware realization of artificial neural networks (ANNs) requires analogue weights to be encoded into the device conductances via blind update and access operations, leveraging Kirchhoff’s circuit laws. However, most memristive solutions lag behind in this aspect due to numerous device nonidealities, like limited number of addressable states, need for a stringent compliance current control, and an electroforming process. By modulating the oxygen vacancy profile of tin oxide switching elements, here we design and evaluate multistate memristors as synaptic connections for brain-inspired computing. Harnessing the advantages of a forming-less compliance-free operation, our devices display gradual switching transitions across multiple conductance states, sufficing the switching requirements of synaptic connections in an ANN. The soft boundary conditions are analyzed systematically, and spike-based plasticity rules, state-dependent spike-timing-dependent-plasticity (STDP) modulations, ternary digital logic, and analogue updatability schemes are proposed and demonstrated comprehensively to establish the analogue programming window of our memristors.
URI: https://hdl.handle.net/10356/140531
ISSN: 2637-6113
DOI: 10.1021/acsaelm.0c00002
DOI (Related Dataset): https://doi.org/10.21979/N9/YWTJBM
Schools: School of Materials Science and Engineering 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.0c00002
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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