Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140596
Title: Localized emission from laser-irradiated defects in 2D hexagonal boron nitride
Authors: Hou, Songyan
Muhammad Danang Birowosuto
Umar, Saleem
Anicet, Maurice Ange
Tay, Roland Yingjie
Coquet, Philippe
Tay, Beng Kang
Wang, Hong
Teo, Edwin Hang Tong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Hou, S., Muhammad Danang Birowosuto, Umar, S., Anicet, M. A., Tay, R. Y., Coquet, P., . . . Teo, E. H. T. (2018). Localized emission from laser-irradiated defects in 2D hexagonal boron nitride. 2D Materials, 5(1), 015010-. doi:10.1088/2053-1583/aa8e61
Journal: 2D Materials
Abstract: Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for photonics device due to its large bandgap and flexibility in nanophotonic circuits. Here, we report bright and localized luminescent centres can be engineered in hBN monolayers and flakes using laser irradiation. The transition from hBN to cBN emerges in laser irradiated hBN large monolayers while is absent in processed hBN flakes. Remarkably, the colour centres in hBN flakes exhibit room temperature cleaner single photon emissions with g 2(0) ranging from 0.20 to 0.42, a narrower line width of 1.4 nm and higher brightness compared with monolayers. Our results pave the way to engineering deterministic defects in hBN induced by laser pulse and show great prospect for application of defects in hBN used as nano-size light source in photonics.
URI: https://hdl.handle.net/10356/140596
ISSN: 2053-1583
DOI: 10.1088/2053-1583/aa8e61
Rights: © 2017 IOP Publishing Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:RTP Journal Articles

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