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Title: InSe monolayer : synthesis, structure and ultra-high second-harmonic generation
Authors: Zhou, Jiadong
Shi, Jia
Zeng, Qingsheng
Chen, Yu
Niu, Lin
Liu, Fucai
Yu, Ting
Suenaga, Kazu
Liu, Xinfeng
Lin, Junhao
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2018
Source: Zhou, J., Shi, J., Zeng, Q., Chen, Y., Niu, L., Liu, F., . . . Liu, Z. (2018). InSe monolayer : synthesis, structure and ultra-high second-harmonic generation. 2D Materials, 5(2), 025019-. doi:10.1088/2053-1583/aab390
Journal: 2D Materials
Abstract: III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physical vapor deposition (PVD) method. The high quality of the sample was confirmed by complementary characterization techniques such as Raman spectroscopy, atomic force microscopy (AFM) and high resolution annular dark field scanning transmission electron microscopy (ADF-STEM). We found the co-existence of different stacking sequence (β- and γ-InSe) in the same flake with a sharp grain boundary in few-layered InSe. Edge reconstruction is also observed in monolayer InSe, which has a distinct atomic structure from the bulk lattice. Moreover, we discovered that the second-harmonic generation (SHG) signal from monolayer InSe shows large optical second-order susceptibility that is 1–2 orders of magnitude higher than MoS2, and even 3 times of the largest value reported in monolayer GaSe. These results make atom-thin InSe a promising candidate for optoelectronic and photosensitive device applications.
ISSN: 2053-1583
DOI: 10.1088/2053-1583/aab390
Rights: © 2018 IOP Publishing Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles


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