Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140710
Title: Domain wall oscillation in magnetic nanowire with a geometrically confined region
Authors: Sbiaa, Rachid
Al Bahri, Mohammed
Piramanayagam, S. N.
Keywords: Science::Physics
Issue Date: 2018
Source: Sbiaa, R., Al Bahri, M., & Piramanayagam, S. N. (2018). Domain wall oscillation in magnetic nanowire with a geometrically confined region. Journal of Magnetism and Magnetic Materials, 456, 324-328. doi:10.1016/j.jmmm.2018.02.057
Journal: Journal of Magnetism and Magnetic Materials
Abstract: In conventional magnetic devices such as magnetic tunnel junctions, a steady oscillation of a soft layer magnetization could find its application in various electronic systems. However, these devices suffer from their low output signal and large spectral linewidth. A more elegant scheme based on domain wall oscillation could be a solution to these issues if DW dynamics could be controlled precisely in space and time. In fact, in DW devices, the magnetic configuration of domain wall and its position are strongly dependent on the device geometry and material properties. Here we show that in a constricted device with judiciously adjusted dimensions, a DW can be trapped within the central part and keep oscillating with a single frequency f. For 200 nm by 40 nm nanowire, f was found to vary from 2 GHz to 3 GHz for a current density between 4.8 × 1012 A/m2 and 5.6 × 1012 A/m2. More interestingly, the device fabrication is simply based on two long nanowires connected by adjusting the offset in both x and y directions. This new type of devices enables the conversion of dc-current to an ac-voltage in a controllable manner opening thus the possibility of a new nano-oscillators with better performance.
URI: https://hdl.handle.net/10356/140710
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2018.02.057
Rights: © 2018 Elsevier B.V. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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