Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/140808
Title: Reducing the interfacial defect density of CZTSSe solar cells by Mn substitution
Authors: Lie, Stener
Tan, Joel Ming Rui
Li, Wenjie
Leow, Shin Woei
Tay, Ying Fan
Bishop, Douglas M.
Gunawan, Oki
Wong, Lydia Helena
Keywords: Engineering::Materials
Issue Date: 2017
Source: Lie, S., Tan, J. M. R., Li, W., Leow, S. W., Tay, Y. F., Bishop, D. M., . . . Wong, L. H. (2018). Reducing the interfacial defect density of CZTSSe solar cells by Mn substitution. Journal of Materials Chemistry A, 6(4), 1540-1550. doi:10.1039/c7ta09668b
Journal: Journal of Materials Chemistry A
Abstract: Cation disorder which arises from the size and chemical environment similarity of Cu and Zn is the limiting factor in Cu2ZnSnSxSe4−x (CZTSSe) performance. Cation substitution is one effective way to solve this issue, however, the most commonly reported substitutes, Ag and Cd, are not ideal as they detract from the earth-abundant and non-toxic motivation of CZTSSe. Mn is a promising candidate in comparison with other candidates (e.g. Fe, Ni or Co), because of its oxidation state stability and larger ionic size mismatch with Cu. In this study, Cu2MnxZn1−xSn(S,Se)4 (CMZTSSe) thin film solar cells were prepared by chemical spray pyrolysis and a subsequent selenization process. We study the influence of Mn substitution on the morphological, structural, optical, electrical and device properties. A distinct phase transformation from CZTSSe kesterite to C(M,Z)TSSe stannite is observed at 20% Mn substitution. A high amount of Mn substitution (x ≥ 0.6) is shown to increase the carrier density significantly which introduces more defects and non-radiative carrier recombination as shown by quenched photoluminescence intensity. Consequently, reduction in device performance is observed for these samples. The highest power conversion efficiency is achieved at x ≈ 0.05 with η = 7.59%, Voc = 0.43 V, Jsc = 28.9 mA cm−2 and FF = 61.03%. The improved open circuit voltage (Voc) and fill factor (FF) are attributed to the improved shunt resistance and carrier transport due to low defect density especially at the CdS/CMZTSSe interface. Finally, based on our electrical characterization, a few suggestions to improve the efficiency are proposed.
URI: https://hdl.handle.net/10356/140808
ISSN: 2050-7488
DOI: 10.1039/c7ta09668b
Rights: © 2018 The Royal Society of Chemistry. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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