Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/141182
Title: Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride
Authors: Cong, Chunxiao
Zou, Chenji
Cao, Bingchen
Wu, Lishu
Shang, Jingzhi
Wang, Haomin
Qiu, Zhijun
Hu, Laigui
Tian, Pengfei
Liu, Ran
Yu, Ting
Keywords: Science::Physics
Issue Date: 2018
Source: Cong, C., Zou, C., Cao, B., Wu, L., Shang, J., Wang, H., . . . Yu, T. (2018). Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride. Nano Research, 11(12), 6227-6236. doi:10.1007/s12274-018-2142-5
Journal: Nano Research
Abstract: Two-dimensional (2D) semiconductors, represented by 2D transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/spin-valley coupling. The most common way to probe such 2D systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2D TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2 and MoS2 monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2 and MoS2 monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2 and MoS2 monolayers and to exploit their intrinsic properties in a multitude of applications.
URI: https://hdl.handle.net/10356/141182
ISSN: 1998-0124
DOI: 10.1007/s12274-018-2142-5
Rights: © 2018 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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