Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/141356
Title: The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
Authors: Chen, Qimiao
Zhang, Lin
Zhou, Hao
Li, Wei
Son, Bong Kwon
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Chen, Q., Zhang, L., Zhou, H., Li, W., Son, B. K., & Tan, C. S. (2020). The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source. Semiconductor Science and Technology, 35(2), 025008-. doi:10.1088/1361-6641/ab5d89
Project: NRF-CRP19-2017-01-00
Journal: Semiconductor Science and Technology
Abstract: A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain and Si incorporation in the barrier layers are effective to increase the band offset in the conduction band. Besides, the band offset is expected to increase with the increase of Sn composition in QDs and the size of QDs.
URI: https://hdl.handle.net/10356/141356
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ab5d89
Rights: © 2020 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6641/ab5d89
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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