Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/141469
Title: InAlN/GaN HEMTs on Si With High fT of 250 GHz
Authors: Xing, Weichuan
Liu, Zhihong
Qiu, Haodong
Ranjan, Kumud
Gao, Yu
Ng, Geok Ing
Palacios, Tomás
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Xing, W., Liu, Z., Qiu, H., Ranjan, K., Gao, Y., Ng, G. I., & Palacios, T. (2018). InAlN/GaN HEMTs on Si With High fT of 250 GHz. IEEE Electron Device Letters, 39(1), 75-78. doi:10.1109/LED.2017.2773054
Journal: IEEE Electron Device Letters
Abstract: In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si substrates. The device with 40-nm gate and 300-nm source-to-drain distance exhibited a high drain current of 2.66 A/mm, a transconductance (gm) of 438 mS/mm, and a high current gain cutoff frequency (fT) of 250 GHz. To the best of our knowledge, this is the highest fT value reported so far for GaN-based transistors on Si. An effective electron velocity of 1.1 × 107cm/s was extracted, which is comparable with those reported for InAlN/GaN HEMTs on SiC. These excellent results indicate that GaN HEMTs on Si have a great potential for low-cost emerging mm-Wave applications.
URI: https://hdl.handle.net/10356/141469
ISSN: 0741-3106
DOI: 10.1109/LED.2017.2773054
Rights: © 2017 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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