Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/141529
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dc.contributor.authorHan, Guifangen_US
dc.contributor.authorDu, Wen Hanen_US
dc.contributor.authorAn, Bao-Lien_US
dc.contributor.authorBruno, Annalisaen_US
dc.contributor.authorLeow, Shin Woeien_US
dc.contributor.authorSoci, Cesareen_US
dc.contributor.authorZhang, Samen_US
dc.contributor.authorMhaisalkar, Subodh Gautamen_US
dc.contributor.authorMathews, Nripanen_US
dc.date.accessioned2020-06-09T03:09:23Z-
dc.date.available2020-06-09T03:09:23Z-
dc.date.issued2018-
dc.identifier.citationHan, G., Du, W. H., An, B.-L., Bruno, A., Leow, S. W., Soci, C., . . . Mathews, N. (2018). Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells. Scripta Materialia, 153, 104-108. doi:10.1016/j.scriptamat.2018.04.049en_US
dc.identifier.issn1359-6462en_US
dc.identifier.urihttps://hdl.handle.net/10356/141529-
dc.description.abstractSubstituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu2O is a promising p-type semiconductor exhibiting good band-alignment with perovskite. However, due to solvent and temperature incompatibility, Cu2O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61-butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu2O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.language.isoenen_US
dc.relation.ispartofScripta Materialiaen_US
dc.rights© 2018 Acta Materialia Inc. All rights reserved. This paper was published by Elsevier Ltd in Scripta Materialia and is made available with permission of Acta Materialia Inc.en_US
dc.subjectEngineering::Materialsen_US
dc.titleNitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cellsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.researchEnergy Research Institute @NTUen_US
dc.contributor.researchResearch Techno Plazaen_US
dc.identifier.doi10.1016/j.scriptamat.2018.04.049-
dc.description.versionAccepted versionen_US
dc.identifier.scopus2-s2.0-85047073224-
dc.identifier.volume153en_US
dc.identifier.spage104en_US
dc.identifier.epage108en_US
dc.subject.keywordsPerovskiteen_US
dc.subject.keywordsSolar Cellen_US
item.fulltextWith Fulltext-
item.grantfulltextopen-
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