Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/141529
Title: Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells
Authors: Han, Guifang
Du, Wen Han
An, Bao-Li
Bruno, Annalisa
Leow, Shin Woei
Soci, Cesare
Zhang, Sam
Mhaisalkar, Subodh Gautam
Mathews, Nripan
Keywords: Engineering::Materials
Issue Date: 2018
Source: Han, G., Du, W. H., An, B.-L., Bruno, A., Leow, S. W., Soci, C., . . . Mathews, N. (2018). Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells. Scripta Materialia, 153, 104-108. doi:10.1016/j.scriptamat.2018.04.049
Journal: Scripta Materialia
Abstract: Substituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu2O is a promising p-type semiconductor exhibiting good band-alignment with perovskite. However, due to solvent and temperature incompatibility, Cu2O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61-butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu2O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics.
URI: https://hdl.handle.net/10356/141529
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2018.04.049
Rights: © 2018 Acta Materialia Inc. All rights reserved. This paper was published by Elsevier Ltd in Scripta Materialia and is made available with permission of Acta Materialia Inc.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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