Please use this identifier to cite or link to this item:
|Title:||On-wafer characterization of low frequency noise in advanced III-V heterojunction bipolar transistors (HBTs)||Authors:||Wang, Hong||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
|Issue Date:||2007||Abstract:||In this project, modification of our current low frequency noise setup by including a probe station to carry out on-wafer low frequency (LF) noise measurement was proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipolar transistors (HBTs) and InP/InGaAs metamorphic HBTs on GaAs. The study enables us to gain a fundamental understanding on mechanism of the low frequency noise in these novel devices. The correlations between LF noise and device material quality and reliability were investigated.||URI:||http://hdl.handle.net/10356/14174||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Research Reports (Staff & Graduate Students)|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.