Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/14174
Title: On-wafer characterization of low frequency noise in advanced III-V heterojunction bipolar transistors (HBTs)
Authors: Wang, Hong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2007
Abstract: In this project, modification of our current low frequency noise setup by including a probe station to carry out on-wafer low frequency (LF) noise measurement was proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipolar transistors (HBTs) and InP/InGaAs metamorphic HBTs on GaAs. The study enables us to gain a fundamental understanding on mechanism of the low frequency noise in these novel devices. The correlations between LF noise and device material quality and reliability were investigated.
URI: http://hdl.handle.net/10356/14174
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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