Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/141806
Title: Recent developments in spin transfer torque MRAM
Authors: Sbiaa, Rachid
Piramanayagam, S. N.
Keywords: Science::Physics
Issue Date: 2017
Source: Sbiaa, R., & Piramanayagam, S. N. (2017). Recent developments in spin transfer torque MRAM. Physica Status Solidi (RRL) - Rapid Research Letters, 11(12), 1700163-. doi:10.1002/pssr.201700163
Journal: Physica Status Solidi (RRL) - Rapid Research Letters
Abstract: Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on. STT‐MRAM devices with in‐plane magnetization configuration have been marketed as niche products. Devices with out‐of‐plane magnetization are being considered for embedded memory as the first step. Aggressive goals include replacing dynamic random access memory (DRAM) with STT‐MRAM. This review article introduces the basics of STT‐MRAM and describes the recent progress in overcoming certain challenges such as reduction of power consumption and increase of storage density, which will make it a strong competitor for DRAM.
URI: https://hdl.handle.net/10356/141806
ISSN: 1862-6254
DOI: 10.1002/pssr.201700163
Rights: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

SCOPUSTM   
Citations 10

24
Updated on Mar 2, 2021

PublonsTM
Citations 10

21
Updated on Mar 7, 2021

Page view(s)

85
Updated on Jan 19, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.